Modeling of metal-ferroelectric-semiconductor field effect transistor subthreshold current |
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| Authors: | Deng-Yuan Chen John Gregory T S Kalkur Carlos A paz de Araujo Larry D McMillan T A Rabson |
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| Affiliation: | 1. Ramtron International Corp. , 1850 Ramtron Dr., Colorado Springs, CO, 80921, USA;2. Microelectronics Research Laboratories, University of Colorado , Colorado Springs, CO, 80933-7150, USA;3. Symetric Corp. , Colorado Springs, CO, 80918, USA;4. Department of Electrical and Computer Engineering , Rice University , Houston, TX, 77251-1892, USA |
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| Abstract: | Abstract A subthreshold current model for metal-ferroelectric-semiconductor field effect transistor (MFSFET) is derived from a new analytical ferroelectric hysteresis model,1.2 the semiconductor surface model,3 the classical diffusion current model,4 as well as the Maxwell equations. The model predicates the shift of MFSFET subthreshold current between forward sweep and backward sweep of gate bias. The simulation results show the effects of coercive voltage, the remanent polarization, the saturation polarization, and the free interface charge between ferroelectric and semiconductor. The external field effect on the saturation polarization (better known as ferroelectric space charge effect) is also modeled. The conventional method to evaluate the interface trapped charge for metal-oxide-semiconductor system is also proposed for MFS system based on the ideal subthreshold current model and its experimental data. |
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| Keywords: | Subthreshold current MFSFET coercive voltage remnant polarization saturation polarization metal-oxide-semiconductor |
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