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STRESS CONTROLLED FERROELECTRIC (BA0.5Sr0.5)TiO3 THIN FILMS PREPARED ON GD2O3/SRTiO3(001) BY A PULSED LASER DEPOSITION
Authors:JUN-KI CHUNG  SANG SU KIM  DONG SIK BAE  MYUNG-HO KIM  TAE KWON SONG  SEUNG EON MOON
Affiliation:1. Changwon National University , Changwon, Korea;2. Electronics and Telecommunications Research Institute , Daejon, Korea
Abstract:ABSTRACT

Stress controlled epitaxial ferroelectric Ba0.5Sr0.5TiO3 (BST) films have been deposited on Gd2O3/SrTiO3 by pulsed laser deposition with oxygen background pressure of 200 mTorr at the deposition temperature of 750°C. In order to control the stress in BST films, oxygen pressures for Gd2O3 buffer layers have been varied from 0.1 to 100 mTorr, while that of BST films have been fixed at 200 mTorr. It has been found that the lattice parameters of the BST films deposited on Gd2O3 were changed. Furthermore, microwave properties of co-planar waveguide (CPW) fabricated on BST films were investigated by a HP 8510C vector network analyzer from 1–20 GHz. Large dielectric tunabilities were observed from the CPW's fabricated on BST films deposited on Gd2O3 layers deposited at low and high oxygen pressures, 0.1 and 100 mTorr, respectively.
Keywords:(Ba  Sr)TiO3 thin film  tunable microwave device  thin film structure
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