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Contribution of dielectric and metallic losses in RF/microwave tunable varactors using (Ba,Sr)TiO3 thin films
Authors:Francisco Ayguavives  Zhang Jin  Ali Tombak  Jon Paul Maria  Amir Mortazawi  Angus I Kingon
Affiliation:1. Department of Material Science and Engineering , NCSU , Raleigh, NC, 27695–7919, USA;2. Department of Electrical Engineering , NCSU , Raleigh, NC, 27695–7919, USA
Abstract:Abstract

Recently, there has been significant interest in use of (Ba,Sr)TiO3 (BST) thin films for tunable high frequency (RF and microwave) components. In a previous work we have shown that BST thin films grown by metalorganic chemical vapor deposition (MOCVD) exhibit films very low losses (as low as 0.003–0.004) and tunabilities over 50% at low operation voltages.

In order to integrate BST thin films in tunable devices, the objectives of this work are : (i) study the effect of bottom and top electrode on the performance of thin film based capacitors, (ii) correlate low frequency (10 kHz) and high frequency (45 MHz - 1 GHz) measurements, (iii) separate the contribution of dielectric losses and metallic losses at both low and high frequency and finally (iv) show the potential usefulness of series capacitors structures.
Keywords:BST films  MOCVD  RF/microwave  tunable varactors  series capacitors
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