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Effects of Ar post-annealing on the electrical properties of Pt/YMnO3/p-Si and Pt/YMnO3/Y2O3/p-Si |
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| Authors: | Kwi Young Yun Jeong Seog Kim Soon Gil Yoon Chae Il Cheon |
| Affiliation: | 1. Dept. of Materials &2. Mechanical Eng , Hoseo University, Asan , Chungnam, 336-795, Korea;3. Mechanical Eng , Hoseo University, Asan , Chungnam, 336-795, Korea;4. Dept. of Materials Eng , Chungnam National University , Taejon, 305-764, Korea |
| Abstract: | Abstract YMnO3 thin films were prepared on p-Si(111) and Y2O3/p-Si(111) substrates by chemical solution deposition and annealed at 800°C for 1 hour under the oxygen pressure of 2 Torr. The YMnO3 thin films showed good crystallinity and c-axis preferred orientation. Effects of Ar post-annealing on electrical properties were examined in Pt/YMnO3/p-Si and Pt/YMnO3/Y2O3/p-Si structures. Leakage current densities decreased considerably by Ar post-annealing. The Pt/YMnO3/p-Si and Pt/YMnO3/Y2O3/p-Si showed clockwise C-V hysteresis induced by ferroelectric polarization after Ar post-annealing and memory windows of MFS and MFIS structure were 1.1V and 0.6V, respectively. |
| Keywords: | YMnO3 Ferroelectric Post-annealing Memory windows |