High temperature conductivity behavior of doped SrTiO3 thin films |
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Authors: | Christian Ohly Susanne Hoffmann Krzysztof Szot Rainer Waser |
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Affiliation: | 1. Institut für Festk?rperforschung, Elektrokeramische Materialien, Forschungszentrum Jülich , 52425, Jülich, Germany;2. Institut für Festk?rperforschung, Elektrokeramische Materialien, Forschungszentrum Jülich , 52425, Jülich, Germany;3. Institut für Werkstoffe der Elektrotechnik II , RWTH Aachen, 52074, Aachen, Germany |
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Abstract: | Abstract In order to investigate the dominant charge transport mechanisms of doped SrTiO3 thin films, high temperature measurements were performed under varying oxygen partial pressures. To meet specific demands of SrTiO3 thin films, a common 4-point measuring setup was improved profoundly by full triaxial shielding and the use of a solid state oxygen pump (made of YSZ). This allowed a precise analysis in the temperature range from 700°C to 1000°C and at oxygen partial pressures (pO2) between 10?20 bar and 1 bar. The conduction behavior of (doped) SrTiO3 thin films, as a function of pO2, revealed characteristics that substantially differ from those of bulk ceramics and cannot be explained by point defect chemistry. Additionally, segregation effects have been observed which lead to a restructuring of the film's morphology to a significant extent. |
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Keywords: | SrTiO3 thin film conductivity oxygen partial pressure morphology defect chemistry segregation phenomena |
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