Performance optimizing on multi-function MMIC design |
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Authors: | MC Tu YC Wang HY Ueng |
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Affiliation: | aDepartment of Electrical Engineering, National Sun Yat-Sen University, 70 Lien-hai Rd., Kaoshiung 804, Taiwan;bWIN Semiconductors Corporation, Hwaya Technology Park, Tao Yuan 333, Taiwan |
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Abstract: | Integration of GaAs BiFET (bipolar-FET) devices to obtain the optimum performance for multiple functions of MMIC design has been achieved. In this study, heterojunction bipolar transistors (HBTs), enhancement mode pseudomorphic HEMTs (E-pHEMTs), and depletion mode pHEMTs are developed for potential applications, including the integration of HBT power amplifier circuitry with pHEMT-based bias control, logic, RF switch, and low-noise amplifier circuitries. Critical processes including gate photolithography and gate recess control are presented and discussed in detail. The enhancement-depletion modes of pHEMT, HBT electrical performance, and uniformity are investigated comprehensively. In addition, power amplifiers and high power switches based on BiFET technology are investigated. |
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Keywords: | GaAs HBT pHEMT Enhancement-mode pHEMT |
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