High-temperature, low threshold current, and uniform operation1×12 monolithic AlGaInAs/InP strain-compensated multiple quantumwell laser array in 1.5 μm |
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| Authors: | Chia-Chien Lin Meng-Chyi Wu Hung-Ping Shiao Kuo-Shung Liu |
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| Affiliation: | Chunghwa Telecom Co. Ltd., Taoyuan; |
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| Abstract: | In this paper, we describe the fabrication of a monolithically integrated 1×12 array of 1.5-μm AlGaInAs/InP strain-compensated multiple-quantum-well (MQW) lasers, which has high reliability and highly uniform characteristics in low threshold current, slope efficiency, and lasing wavelength. Besides, each diode on the array exhibits a high characteristic temperature of 88 K and a low slope-efficiency drop of less than 1 dB between 20-80°C and a lasing wavelength of 1510 nm at 20°C and 20 mA. Also, the diode on the array has a maximum resonance frequency of above 8 GHz or 3-dB modulation bandwidth of 12 GHz |
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