| SRAM K6R4016V1D单粒子闩锁及防护试验研究 |
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| 引用本文： | 余永涛,封国强,陈睿,上官士鹏,韩建伟.SRAM K6R4016V1D单粒子闩锁及防护试验研究[J].原子能科学技术,2012,46(Z1):587-591. |
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| 作者姓名： | 余永涛 封国强 陈睿 上官士鹏 韩建伟 |
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| 作者单位： | 1.中国科学院 空间科学与应用研究中心，北京100190；2.中国科学院研究生院，北京100049 |
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| 基金项目： | 国家自然科学基金资助项目，中国科学院知识创新工程青年基金资助项目，基础科研项目资助，中国科学院支撑技术项目资助 |
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| 摘 要： | 本工作利用脉冲激光单粒子效应模拟试验装置对三星公司的SRAM K6R4016V1D进行了单粒子闩锁效应试验研究。试验测得了此器件的单粒子闩锁效应脉冲激光能量阈值、闩锁截面曲线和闩锁电流。针对这款器件，还对工程中防护闩锁过流常用的限流和断电方法进行了试验研究。试验结果表明，该器件具有非常低的单粒子闩锁效应阈值能量和很高的闩锁饱和截面，对空间辐射环境极其敏感。
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| 关 键 词： | 脉冲激光 单粒子闩锁效应 限流电阻 断电解除闩锁 |
Experimental Study on Single Event Latchup of SRAM K6R4016V1D and Its Protection |
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| YU Yong-tao
,
FENG Guo-qiang
,
CHEN Rui
,
SHANGGUAN Shi-peng
,
HAN Jian-wei.Experimental Study on Single Event Latchup of SRAM K6R4016V1D and Its Protection[J].Atomic Energy Science and Technology,2012,46(Z1):587-591. |
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| Authors: | YU Yong-tao FENG Guo-qiang CHEN Rui SHANGGUAN Shi-peng HAN Jian-wei |
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| Affiliation: | 1.Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190, China;2.Graduate University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Pulsed laser single event effects (PLSEE) facility was used to study single event latchup sensitivities of Samsung SRAM K6R4016V1D. The SEL threshold energy, cross section and current of the SRAM were obtained from the test. Current-limiting resistance and power cycling, which are commonly used in the engineering application, were also studied for the SRAM. The results show that SEL threshold energy is very low and SEL saturation cross section is very high for the SRAM. The SRAM is extremely susceptible to the radiation in the space. |
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| Keywords: | pulsed laser single event latchup current-limiting resistant SEL mitigation by power cycle |
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