Few electron limit of n-type metal oxide semiconductor single electron transistors |
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Authors: | Prati Enrico De Michielis Marco Belli Matteo Cocco Simone Fanciulli Marco Kotekar-Patil Dharmraj Ruoff Matthias Kern Dieter P Wharam David A Verduijn Jan Tettamanzi Giuseppe C Rogge Sven Roche Benoit Wacquez Romain Jehl Xavier Vinet Maud Sanquer Marc |
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Affiliation: | Laboratorio MDM, CNR-IMM, Via Olivetti 2, I-20864 Agrate Brianza, Italy. enrico.prati@cnr.it |
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Abstract: | We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices. |
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