Hole Mobility in Acceptor-Doped, Monocrystalline SrTiO3

The oxidation reaction equilibrium constant and the holes mobility in p -type-semiconducting SrTiO₃ single crystals were determined directly by simultaneous Hall and conductivity measurements between 500° and 1000°C. This information and the SrTiO₃ defect model were used to interpret the electrical measurements taken on this substance which represents a model substance for semiconducting perovskites. Measurements with varying oxygen partial pressures showed that shifts of the crystal defect equilibrium give rise to changes in the carrier concentration with unchanged carrier mobility.