| 激光功率对多孔硅微Raman谱的影响 |
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| 引用本文： | 任鹏,孙立来,廖家欣,李君求,万小军,史向华,刘小兵. 激光功率对多孔硅微Raman谱的影响[J]. 材料导报, 2007, 21(5): 138-140 |
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| 作者姓名： | 任鹏 孙立来 廖家欣 李君求 万小军 史向华 刘小兵 |
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| 作者单位： | 长沙理工大学物理与电子科学学院,长沙,410076;湖南文理学院物理系,常德,415000;湖南城市学院计算机科学与技术系,益阳,413000 |
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| 基金项目： | 湖南省自然科学基金，湖南省教育厅科研项目 |
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| 摘 要： | 运用微Raman谱仪以不同功率的激光入射到用阳极脉冲腐蚀制备的多孔硅样品以研究多孔硅的稳定性.用斯托克斯与反斯托克斯散射强度的比率确定样品的温度.观察比较不同温度下多孔硅样品的Raman谱趋向,发现在激光功率和样品温度之间的关系曲线上有3个过程,与Raman频移和Raman强度的曲线相一致.所有现象都可以用Si-O键和非晶Si被氧化的机制进行解释.
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| 关 键 词： | 多孔硅 热稳定性 微Raman谱 激光功率 |
Effects of Micro-Raman Spectra of Porous Silicon on Laser Powers |
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| REN Peng,SUN Lilai,LIAO Jiaxin,LI Junqiu,WAN Xiaojun,SHI Xianghua,LIU Xiaobing. Effects of Micro-Raman Spectra of Porous Silicon on Laser Powers[J]. Materials Review, 2007, 21(5): 138-140 |
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| Authors: | REN Peng SUN Lilai LIAO Jiaxin LI Junqiu WAN Xiaojun SHI Xianghua LIU Xiaobing |
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| Affiliation: | 1 Department of Physics and Electronic Science,Changsha University of Science and.Technology,Changsha 410076; 2 Department of Physics,Hunan University of Arts and Science,Changde 415000;3 Department of Computer Science and Technology, Hunan University of City,Yiyang 413000 |
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| Abstract: | The thermal stability of porous silicon (PS) fabricated by pulsed anodic etching method is investigated by using micro-Raman spectra with different incident laser powers. The ratio of Stokes and Anti-Stokes scattering intensities are used to determine temperature of the sample.The Raman spectra of PS in different temperatures are compared. The trend of spectra is observed. The curve indicating relations between laser power and sample temperature reveals three processes. It is consistent with the curve of Raman shift and Raman intensity. All the phenomena are explained by the oxygenation mechanism of Si-O bond and amorphous Si. |
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| Keywords: | porous silicon thermal stability micro-Raman spectra laser power |
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