| Abstract: | These last years, the triple‐gate fin field‐effect transistor (FinFET) has appeared as attractive candidate to pursue the complementary metal‐oxide semiconductor technology roadmap for digital and analog applications. However, the development of analog applications requires models that properly describe the static and RF behaviors as well as the extrinsic parameters related to the three‐dimensional FinFET architecture, in order to establish adequate design strategies. We demonstrate the feasibility of the compact model developed for symmetric doped double‐gate metal‐oxide‐semiconductor field‐effect transistor (symmetric doped double‐gate MOSFET) to reproduce the experimental dc and RF behaviors for 40‐nm technology node Silicon‐on‐Insulator triple‐gate FinFETs. Extrinsic gate capacitances and access extrinsic resistances have been included in order to properly predict the transistor small‐signal behavior, the current gain, and the maximum available power gain cut‐off frequencies. Finally, the improvement of the FinFET RF characteristics by the reduction of the parasitics is addressed. Copyright © 2014 John Wiley & Sons, Ltd. |
