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RBS studies of the lattice damage caused by 1 Me V Si implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature |
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| Authors: | Tian-bing Xu Pei-ran Zhu Jun-si ZhouDaiqing Li Baoan Gong Ya WanShanming MuQing-tai Zhao Zhong-lie Wang |
| Affiliation: | Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China Yantai Teachers' College, Yantai 264025, China Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Institute of Microelectronics, Peking University, Beijing 100871, China |
| Abstract: | The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+irradiation at room temperature and 350°C has been studied. For irradiations at 350°C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 × 1015 + Si/cm2 for GaAs, and is 5 × 1015 Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350°C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs. |
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