Fast silicon p doped low temperature bolometer |
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| Authors: | C. Boragno U. Valbusa G. Gallinaro D. Bassi S. lannotta F. Mori |
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| Affiliation: | 1. GNSM and Dipartimento di Fisica, Università di Genova, Genova Italy;2. INFN and Dipartimento di Fisica, Università di Genova, Genova Italy;3. Istituto di Scienze Fisiche, Università di Trento, Povo Italy |
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| Abstract: | The construction of a fast silicon p doped low temperature bolometer is described. It is a 5 × 5 × 0.3 mm Si <100 > n-type chip whose surface has been implanted with p doses of the order of 1018cm−3. The bolometer has a response time better than 1 μs, a responsivity of 104VW−1 and a NEP of . |
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| Keywords: | superconductivity bolometer semiconductor |
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