EEPROM transistor fabricated with stacked SiOx LPCVDfilms |
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Authors: | Calleja W Aceves M Falcony C |
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Affiliation: | Dept. de Electron., INAOE, Puebla; |
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Abstract: | The key fabrication steps and the write/erase characteristics of a new memory metal-insulator-silicon transistor are presented. The memory cell is composed of a single silicon gate and a stacked SiOx LPCVD film as an active memory film. With this new arrangement, the memory device shows excellent endurance |
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