混合编程法及其在绝缘子电场和电位分析中的应用

室温硫化硅橡胶防污闪涂料在电力系统外绝缘中有着广泛的应用,有必要分析它对电场和电位分布的影响。分析不同厚度情况下硅橡胶涂层的电阻率和相对介电常数对绝缘子附近最大强场、沿面电场和电位的影响。采用Matlab与ANSYS混合编程的方法实现了绝缘子的自动建模,采用C++Builder(BCB)与ANSYS混合编程的方法实现了自动导出lis文件,节省了工作量和后续处理时间,同时使用Matlab对lis文件处理获得沿面的场强和电位。研究结果表明:瓷支柱绝缘子喷涂硅橡胶后无论是最大场强还是局部细节场强均未见明显变化;随涂层厚度、相对介电常数增加最大场强略有减少,但变化程度非常小,沿面平均场强略有增加;随电阻率的变化最大场强和沿面平均场强基本不变。电阻率、介电常数和厚度正常的取值范围内时硅橡胶涂层对绝缘子及附近电场畸变造成的影响可以忽略。

Hybrid Programming Method and Its Application in Analysis on Electric Field and Potential of Insulators

Room temperature vulcanization(RTV) silicone rubber anti-pollution coating is used extensively in power system external insulation,so it is necessary to analyze its influences on the distribution of electric field and potential.The influences of resistivity and relative dielectric constant of silicone rubber anti-pollution coating with different thicknesses maximum electric field strength on the maximum electric field strength,surface field strength and potential near to insulators are analyzed.Adopting hybrid programming by Matlab and ANSYS the automatic modeling of insulator is implemented,and utilizing hybrid programming by ANASYS and C++Builder(BCB) the lis files can be automatically exported,thus not only both workload and later processing time can be reduced,but also the exported lis files can be processed by Matlab to obtain both surface field strength and potential.Research results show that after spraying silicone rubber anti-pollution coating onto the surface of porcelain post insulator there is not obvious change of whether maximum field strength or local detailed field strength;along with the increase of coating thickness and relative dielectric constant,the maximum field strength is slightly decreased and the average surface field strength is slightly increased;the maximum field strength and surface field strength basically do not vary with resistivity.Within normal range to choose the vales of resistivity,relative dielectric constant and thickness of the coating,the influence of silicone rubber anti-pollution coating on distortion of electric field of insulator and electric field near to insulator can be neglected.