| 修饰的薄膜CdSe电极／Fe（CN）6^4—溶液界面的电荷转移 |
| |
| 引用本文： | 肖绪瑞,林原.修饰的薄膜CdSe电极／Fe（CN）6^4—溶液界面的电荷转移[J].感光科学与光化学,1990(4):254-259. |
| |
| 作者姓名： | 肖绪瑞 林原 |
| |
| 作者单位： | 中国科学院感光化学研究所，中国科学院感光化学研究所，中国科学院感光化学研究所 北京 100101，北京 100101，北京 100101 |
| |
| 摘 要： | 本文研究了硬脂酸二茂铁酯L-B膜修饰的薄膜Cdse电极的光诱发界面多相电荷转移过程。通过测量异相电荷转移反应速度常数K_(et),进一步分析了修饰的薄膜CdSe电极光电化学过程的可能反应速度控制步。分析表明界面的电荷转移是反应的速度控制步。薄膜CdSe电极可以通过选择电活性修饰分子和溶液中氧化还原离子来进一步提高和改善其光电化学性能。
|
| 关 键 词： | 半导体电极 CdSe薄膜 修饰 L－B膜 |
CHARGE TRANSFER AT MODIFIED CdSe THIN FILM ELECTRODE/FE(CN)_6~(4-) SOLUTION INTERFACE |
| |
| XIAO XU-RUI LIN YUAN SUN BI-ROU.CHARGE TRANSFER AT MODIFIED CdSe THIN FILM ELECTRODE/FE(CN)_6~(4-) SOLUTION INTERFACE[J].Photographic Science and Photochemistry,1990(4):254-259. |
| |
| Authors: | XIAO XU-RUI LIN YUAN SUN BI-ROU |
| |
| Abstract: | Light-induced heterogeneous charge transfer processes of CdSe thin film electrodes modified with FcOCOC17H3s L-B films were studied in Fe(CN)64-solution.Heterogeneous charge transfer rate constant Kat were determined and the possible rate limiting situation existed in photoelectrochemical processes were analysed.The results indicated that interfacial charge transfer may be the rate limiting step.A fast interfacial charge transfer processes based on selecting electro-active molecules for modification,and redox couples of solution are expected for improving in- the photoelectrochemical behavior of CdSe thin film electrodes. |
| |
| Keywords: | thin film electrode interfacial charge transfer reaction rate constant modified electrode L-B films |
| 本文献已被 CNKI 维普 等数据库收录！ |
