| 不同溅射时间下AlN缓冲层对ZnO薄膜的影响 |
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| 引用本文： | 赵祥敏,李敏君,张伟,赵文海. 不同溅射时间下AlN缓冲层对ZnO薄膜的影响[J]. 哈尔滨理工大学学报, 2012, 0(2): 114-117 |
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| 作者姓名： | 赵祥敏 李敏君 张伟 赵文海 |
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| 作者单位： | 牡丹江师范学院新型碳基功能与超硬材料省级重点实验室;黑龙江商业职业学院 |
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| 基金项目： | 牡丹江师范学院重点创新预研项目(Gy201001);牡丹江师范学院科学技术研究项目(Ky201109);牡丹江师范学院教改工程项目(11-XJ12089) |
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| 摘 要： | 实验采用射频磁控溅射技术,制备了不同溅射时间下AlN缓冲层的ZnO薄膜,研究了薄膜的结构、形貌及电学性能.结果表明,不同溅射时间下AlN缓冲层ZnO薄膜的生长依然是(002)择优取向,而且当缓冲层溅射时间为60min时,ZnO薄膜的结构和电学性能最好.
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| 关 键 词： | 缓冲层 ZnO薄膜 射频磁控溅射 |
AlN Buffer Layer to ZnO Thin Films Influence under Different Sputtering Time |
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| ZHAO Xiang-min,LI Min-jun,ZHANG Wei,ZHAO Wen-hai. AlN Buffer Layer to ZnO Thin Films Influence under Different Sputtering Time[J]. Journal of Harbin University of Science and Technology, 2012, 0(2): 114-117 |
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| Authors: | ZHAO Xiang-min LI Min-jun ZHANG Wei ZHAO Wen-hai |
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| Affiliation: | 1,2(1.Novel Carbon-based Functionality Provincial Key Laboratory of Superhard Materials,Mudanjiang Normal College,Mudanjiang 157012,China; 2.Heilongjiang Institute of Commerce,Mudanjiang 157011,China) |
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| Abstract: | In the experiment,the ZnO thin films were prepared by RF magnetron sputtering under different sputtering time,and the crystalline structure,surface morphologies and photoelectric properties of the samples were studied.The results showed that under different sputtering time of ZnO thin film AlN buffer layer growth is still(002) preferred orientation,and when the buffer layer of the sputtering time was 60min,ZnO thin film structure and electrical properties is of the best. |
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| Keywords: | bueffer layer ZnO thin films RF magnetron sputtering |
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