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Barrier-height measurement for a gallium arsenide metal-semi-insulator interface |
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| Authors: | G I Ayzenshtat M A Lelekov O P Tolbanov |
| Affiliation: | (1) Tomsk State University, Tomsk, 634034, Russia |
| Abstract: | The I-V characteristics of structures from semi-insulating gallium arsenide with different contacts are analyzed. The Schottky barrier height was measured using two procedures; its values obtained for vanadium-based contacts amount to 0.81 ± 0.02 V. |
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