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| 晶体管、MOS器件 | |
| 摘 要： | Y2002-63306-417 0307166等离子体增强化学汽相沉积形成钝化膜的偏压应力导致 InAlAs/InGaAs/InP HEMTs 隔离退化=Isolationdegradation of InAlAs/InGaAs/InP HEMTs due to biasstress depending on passivation films formed by PCVD[会,英]/Moriguchi,H.& Hoshi,S.//2001 IEEE In-ternational Conference on Indium Phosphide and RelatedMaterials.—417～420(E) |
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