Electrothermal analysis of AlGaN/GaN high electron mobility transistors |
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Authors: | Sriraaman Sridharan Anusha Venkatachalam P D Yoder |
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Affiliation: | (1) School of Electrical and Computer Engineering, Georgia Institute of Technology, 210 Technology Circle, Savannah, GA 31407, USA |
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Abstract: | Efficiency of AlGaN/GaN HEMTs used in high power, high frequency applications is thought to be limited by parasitic thermal
effects. In this study, we investigate coupled electrical and thermal transport in AlGaN/GaN HEMTs using an ensemble Monte
Carlo model. Calculation of the non-equilibrium phonon population reveals a hot spot in the channel that is localized at low
drain-source bias, but expands towards the drain at higher bias, significantly degrading channel mobility. |
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Keywords: | Gallium nitride HEMT Electrothermal transport Phonon population |
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