| 高K栅堆叠结构MOSFET器件阈值电压不稳定度的半经验解析模型 |
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| 引用本文： | 何进,马晨月,张立宁,张健,张兴.高K栅堆叠结构MOSFET器件阈值电压不稳定度的半经验解析模型[J].半导体学报,2009,30(8):084003-4. |
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| 作者姓名： | 何进 马晨月 张立宁 张健 张兴 |
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| 作者单位： | School;Computer;Information;Engineering;Shenzhen;Graduate;Peking;University;EECS;Electronic;Science; |
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| 摘 要： | A semi-empirical analytic model for the threshold voltage instability of MOSFET is derived from the Shockley-Read-Hall (SRH) statistics in this paper to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression of the filled trap density in terms of the dynamic time is derived from the SRH statistics. The semi-empirical analytic model of the threshold voltage instability is developed based on the MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by the extensive experimental data of the trapping and de-trapping stress from the different high k gate configuration.
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| 关 键 词： | 高K栅堆叠，纳米级MOSFET，界面态电荷，俘获和释放，阈值电压动态行为，集约模型 |
A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks |
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| He Jin,Ma Chenyue,Zhang Lining,Zhang Jian and Zhang Xing.A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks[J].Chinese Journal of Semiconductors,2009,30(8):084003-4. |
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| Authors: | He Jin Ma Chenyue Zhang Lining Zhang Jian and Zhang Xing |
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| Affiliation: | School of Computer & Information Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055, China; EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;EECS, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China |
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| Abstract: | A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall (SRH) statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between t... |
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| Keywords: | high-k gate stack nanoscale MOSFETs interface trap and charges trapping and detrapping threshold voltage dynamic behavior compact modeling |
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