等离子体过程不稳定性和氢处理对HIT电池界面特性影响的研究

采用等离子体增强化学气相沉积（PECVD）技术制备薄膜硅/晶体硅异质结，通过测量沉积了本征非晶硅（a-Si:H(i)）后晶体硅（c-Si）的少子寿命以及结构为Ag/a-Si:H(p)/a-Si:H(i)/c-Si(n) /Ag 异质结的暗I-V特性，研究了等离子体初期瞬态过程和氢预处理对异质结界面性质的影响。结果表明：使用挡板且当挡板时间（tS）大于100秒时，可以有效地减少等离子体初期瞬态过程对界面性质的负面影响；与热丝化学气相沉积中氢原子处理有利于界面钝化不同，PECVD中的氢等离子体处理，由于氢原子的轰击特性，对钝化可能存在一定的不利影响；最优氢预处理时间为60秒。

Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD

The amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si SHJ) were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The influence of the initial transient state of plasma and the hydrogen pre-treatment on the interfacial properties of the heterojunctions was studied. Experimental results indicate that: (1) The instability of plasma in the initial stage will damage the surface of c-Si. Using a shutter to shield the substrate for 100 seconds since starting discharge can prevent the influence of the instable plasma process on the Si surface and as well as the interface between a-Si and c-Si. (2) The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment, and the optimal time of hydrogen pre-treatment is about 60 seconds.