| 8-羟基喹啉铝作为修饰层对C60有机场效应管性能影响的研究 |
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| 引用本文： | 郑宏,程晓曼,田海军,赵赓.8-羟基喹啉铝作为修饰层对C60有机场效应管性能影响的研究[J].半导体学报,2011,32(9):094005-4. |
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| 作者姓名： | 郑宏 程晓曼 田海军 赵赓 |
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| 作者单位： | 天津理工大学,天津理工大学,天津理工大学,天津理工大学 |
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| 摘 要： | 采用真空蒸镀技术制备了以喹啉铝(tris(8-hydroxyquinoline) aluminum, Alq3)作为修饰层的C60有机场效应管器件，并研究了修饰层的厚度对于器件性能的影响。实验表明，随着Alq3修饰层厚度的增加，器件的性能参数得到改进。当Alq3修饰层厚度为10nm时，器件场效应的迁移率达到最大值，为1.2810-2cm2/Vs，阈值电压也下降到了10V。分析了缓冲层使器件性能提高的主要原因可能有两个：一个是可以阻止金属原子扩散进入C60有机层，另一个是使Al/C60界面间的沟道电阻降低。
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| 关 键 词： | 有机场效应晶体管 性能增强 羟基喹啉 C60 缓冲层 Alq3 电极活性物质 场效应迁移率 |
| 收稿时间： | 3/1/2011 2:28:31 PM |
| 修稿时间： | 5/10/2011 3:58:18 PM |
Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer |
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| Zheng Hong,Cheng Xiaoman,Tian Haijun and Zhao Geng.Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J].Chinese Journal of Semiconductors,2011,32(9):094005-4. |
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| Authors: | Zheng Hong Cheng Xiaoman Tian Haijun and Zhao Geng |
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| Affiliation: | Tianjin University of Technology,Tianjin University of Technology,Tianjin University of Technology,Tianjin University of Technology |
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| Abstract: | We have investigated the property of C60-based organic field effect transistors (OFETs) with tris(8-hydroxyquinoline) aluminum(Alq3) buffer layer inserted between source/drain electrodes and active material. The electrical characteristics of OFETs are improved with insertion of Alq3 film thickness. The peak field effect mobility is up to 1.2810-2cm2/Vs and the threshold voltage is decreased to 10V while the thickness of Alq3 is 10nm. The reasons for the improved performance of the devices are probably due to the prevention of metal atom diffusing into C60 active layer and the reduction of the channel resistance in Alq3 films. |
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| Keywords: | Organic Field Effect Transistors buffer layer C60 Alq3 channel resistance |
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