Thin films of Cu(In,Ga)Se2 and ordered vacancy compound prepared by thermal crystallization and their photovoltaic applications |
| |
| Authors: | Toshiyuki Yamaguchi Toshitsugu Kobata Shigetoshi Niiyama Takashi Nakamura Akira Yoshida |
| |
| Affiliation: | a Department of Electrical Engineering, Wakayama College of Technology, Gobo–shi 644-0023, Japan;b Wakayama Industrial Technology Center, Wakayama-shi 649-6261, Japan;c Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi–shi 441-8580, Japan |
| |
| Abstract: | Thin films of Cu–In–Ga–Se alloy system with various composition were prepared by thermal crystallization from In/CuInGaSe/In precursor. Electron probe microanalysis and X-ray diffraction study revealed that these samples were assigned to chalcopyrite Cu(In,Ga)Se2 or ordered vacancy compound Cu(In,Ga)2Se3.5. Solar cell with ZnO:Al/i–ZnO/CdS/Cu(In,Ga)Se2/Mo/soda-lime glass substrate structure was fabricated by using thermal crystallization technique, and demonstrated a 9.58% efficiency without AR-coating. |
| |
| Keywords: | Cu(In Ga)Se2 Ordered vacancy compound Thermal crystallization Solar cell |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
