MOSFET design for forward body biasing scheme |
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| Authors: | Hokazono A. Balasubramanian S. Ishimaru K. Ishiuchi H. Tsu-Jae King Liu Chenming Hu |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA; |
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| Abstract: | Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme. |
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