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Bottom‐Up Nano‐heteroepitaxy of Wafer‐Scale Semipolar GaN on (001) Si
Authors:Jui‐Wei Hus  Chien‐Chia Chen  Ming‐Jui Lee  Hsueh‐Hsing Liu  Jen‐Inn Chyi  Michael R S Huang  Chuan‐Pu Liu  Tzu‐Chiao Wei  Jr‐Hau He  Kun‐Yu Lai
Affiliation:1. Department of Optics and Photonics, National Central University, Chung‐Li, Taiwan;2. Department of Electrical Engineering, National Central University, Chung‐Li, Taiwan;3. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan;4. Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;5. Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
Abstract:
Keywords:GaN  nano‐heteroepitaxy  quantum well  semipolar  Si substrate
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