GaInAsP/InP DH lasers with a chemically etched facet |
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| Authors: | Iga K Pollack M Miller B Martin R |
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| Affiliation: | Bell Telephone Laboratories, Inc., Holmdel, NJ, USA; |
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| Abstract: | We describe a new configuration and novel fabrication method for GaInAsP/InP DH lasers in which one of the facet mirrors is chemically etched and the other one is formed by cleaving. The etched facet is fabricated monolithically by wet chemical etching in a solution of HCl:CH3COOH:H2O2= (1:2:1). Broad-area contact lasers of this type operating at room temperature at a wavelength ofsim 1.3 mum have been demonstrated. |
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