Comparison of -MOSFET lifetime estimates based on GIDL enhancement and transconductance degradation as criteria

A comparison of MOSFET lifetimes based on gate-induced drain leakage (GIDL) enhancement and transconductance degradation as criteria is presented. Analysis of damage mechanisms indicates that degradations related to interface state generation limit the MOSFET lifetime at reduced voltage operations. In conventional gate oxide MOSFETs, GIDL enhancement due to band-to-defect tunneling and transconductance degradation limit the lifetime at reduced voltage. For MOSFETs with reoxidized nitrided gate oxides, our results show that GIDL enhancement due to band-to-defect tunneling is a better reliability monitor than transconductance degradation at low operating voltages.