Direct current electric field adjustable phase transformation behavior in (Pb,La)(Zr,Ti)O3 antiferroelectric thick films |
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| Authors: | Xiujian Chou Wenping Geng Yongbo Lv Jun Liu Wendong Zhang |
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| Affiliation: | 1. Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China Ministry of Education, Taiyuan, 030051, Shanxi, China
2. Science and Technology on Electronic Test and Measurement Laboratory, Xueyuan Road 3, Taiyuan, 030051, Shanxi, China
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| Abstract: | (Pb,La)(Zr,Ti)O3 antiferroelectric 1.4 μm-thick films have been prepared on Pt (111)/Ti/SiO2/Si(100) substrates by sol–gel process. The structures and dielectric properties of the antiferroelectric thick films were investigated. The films displayed pure perovskite structure with (100)-preferred orientation. The surface of the films was smooth, compact and uniform. The antiferroelectric (AFE) characterization have been demonstrated by P (polarization)-E (electric field) and C(capacitance)-V (DC bias) curves. The AFE–ferroelectric (FE) and FE-to-paraelectric (PE) phase transition were also investigated as coupling functions of temperature and direct current electric field. With the applied field increased, the temperature of AFE-to-FE phase transition decreased and the FE-to-PE phase shifted to high temperature. The AFE-to-FE phase transition was adjustable by direct current electric field. (Pb,La) (Zr,Ti) O3 antiferroelectric films have broad application prospects in microelectromechanical systems because of the phase transition. |
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