Self-organized GaAs patterns on misoriented GaAs (1 1 1)B substrates using dilute nitrides by molecular beam epitaxy |
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Authors: | R. Gargallo, J. Miguel-S nchez, . Guzm n, U. Jahn,E. Mu oz |
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Affiliation: | aDepartamento de Ingeniería Electrónica, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), ETSI Telecomunicación, Ciudad Universitaria s/n, 28040 Madrid, Spain bPaul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany |
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Abstract: | Recently, the growth of patterned surfaces is being used to demonstrate the site control of the three-dimensional nanostructures, and in particular quantum dots. Nevertheless the pre-patterning techniques show some disadvantages. In this work, we report a novel in situ hole-patterning technique which consists of growing by molecular beam epitaxy a dilute nitride GaAsN layer on 1° and 2° towards [2¯ 1 1] misoriented GaAs(1 1 1)B substrates. Later, we carry out a regrowth of GaAs layers on this patterned surfaces in order to improve the surface quality and the homogeneity of the characteristics of holes (size, depth, etc.). Consecutively, we use these patterned surfaces to grow InAs quantum dots, whose growth on these misorientations results in a greater difficulty. A structural characterization of the resulting samples, both hole-patterns and quantum dots, has been performed. Besides, we have realized studies of the dependence of the surface morphology on some important parameters (including substrate misorientation, thicknesses of the GaAsN and GaAs layers grown and growth conditions). |
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Keywords: | Molecular beam epitaxy Dilute nitrides Patterned surface Quantum dots InAs |
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