AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz |
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Authors: | R Quay Dipl-Phys Dr techn G Weimann Prof Dr rer nat |
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Affiliation: | 1. Fraunhofer Institut für Angewandte Festk?rperphysik (IAF), Tullastra?e 72, D-79108, Freiburg
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Abstract: | An overview of properties and recent achievements for AlGaN/GaN high electron mobility transistors (HEMT) on semi-insulating SiC substrate is given towards high power and broadband applications up to a frequency of 40 GHz. Starting from epitaxial growth and process technology we present state-of-the-art power results obtained at the Fraunhofer Institute (IAF) from AlGaN/GaN HEMTs on SiC. Further, a one-stage 16 GHz MMIC power amplifier circuit with 1.6 W output power is presented. This result represents the first AlGaN/GaN MMIC on SiC fabricated in Europe. |
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