Passivation and antireflection AZO:H layer in AZO:H/p-Si heterojunction solar cells |
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Authors: | Qian Jiang Weiyan Wang Yuheng Zeng Wei Xu Jinhua Huang Ti Zhou Weijie Song |
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Affiliation: | 1. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China 2. Sun Earth Solar Power Co., Ltd., No. 211 Xing Guang Road, High-Tech Zone, Ningbo, 315040, China
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Abstract: | In this work, aluminum-doped zinc oxide (AZO)/p-Si heterojunction solar cells were prepared by sputtering of ~120 nm AZO thin films in Ar or Ar–H2 atmosphere on textured p-Si wafers, and the effects of hydrogen incorporation on the solar cell performance were investigated. Results showed that the performance of AZO/p-Si heterojunction solar cells was improved with the increase of hydrogen volume concentration from 0 to 23 %. The AZO:H/p-Si heterojunction solar cells prepared in Ar–23 % H2 exhibited a short-circuit current density of 29 mA/cm2 and a conversion efficiency of 2.84 %. The reflectance measurement indicated that the reflectance of p-Si surface in the range of 400–1,100 nm decreased from 13 to 4 % after AZO:H films coating; and the capacitance–voltage measurement indicated that the density of defect states at AZO/p-Si interface was decreased after hydrogen incorporation. Passivation and antireflection functions can be realized in AZO:H films deposited in Ar–H2, which opens a novel route to prepare cost-effective AZO/p-Si heterojunction solar cells. |
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