| Design of GaAs/AlxGa1?xAs asymmetric quantum wells for THz-wave by difference frequency generation |
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| 引用本文： | 曹小龙,姚建铨,朱能念,徐德刚.Design of GaAs/AlxGa1?xAs asymmetric quantum wells for THz-wave by difference frequency generation[J].光电子快报,2012,8(3):229-232. |
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| 作者姓名： | 曹小龙 姚建铨 朱能念 徐德刚 |
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| 作者单位： | Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin
University, Tianjin 300072, China；Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072,
China;Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin
University, Tianjin 300072, China；Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072,
China;Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin
University, Tianjin 300072, China；Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072,
China;Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin
University, Tianjin 300072, China；Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072,
China |
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| 基金项目： | supported by the National Basic Research Program of China (No.2007CB310403);the National Natural Science Foundation of China (Nos.60801017 and 61172010);the Science and Technology Committee of Tianjin (No.11JCYBJC01100) |
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| 摘 要： | The energy levels, wave functions and the second-order nonlinear susceptibilities are calculated in GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As asymmetric quantum well (AQW) by using an asymmetric model based on the parabolic and non-parabolic band. The influence of non-parabolicity can not be neglected when analyzing the phenomena in narrow quantum wells and in higher lying subband edges in wider wells. The numerical results show that under double resonance (DR) conditions, the second-order difference frequency generation (DFG) and optical rectification (OR) generation susceptibilities in the AQW reach 2.5019 mm/V and 13.208 mm/V, respectively, which are much larger than those of the bulk GaAs. Besides, we calculate the absorption coefficient of AQW and find out the two pump wavelengths correspond to the maximum absorption, so appropriate pump beams must be selected to generate terahertz (THz) radiation by DFG.
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