| InGaAs／AlAs双势垒RTD单片高速逻辑IC的研制 |
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| 引用本文： | 雷培明 Willia,W. InGaAs／AlAs双势垒RTD单片高速逻辑IC的研制[J]. 微电子学与计算机, 1996, 13(2): 1-5 |
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| 作者姓名： | 雷培明 Willia W |
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| 作者单位： | 美国Ｎｏｔｒｅ Ｄａｍｅ大学电机工程系 |
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| 摘 要： | 本文叙述一种新型的基于ＩｎＧａＡｓ／ＡｌＡＳ双势垒ＲＴＤ单片高速逻辑集成电路的设计和制造技术。由该技术产主的Ｓｃｈｏｔ－ｔｋｙ／ＲＴＤ集成双稳开关已工作到３ＧＨＺ的振荡频率。
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| 关 键 词： | InGaAs／AlAs，双势垒RTD，双稳开关电路，高速RTD逻辑 |
Fabrication of InGaAs/AlAs Double Barrier RTD Based Monolithic High-Speed Logicintegrated Circuits |
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| Let Peiming, Suresh Subramaniam, Gary H. Bernstein. Fabrication of InGaAs/AlAs Double Barrier RTD Based Monolithic High-Speed Logicintegrated Circuits[J]. Microelectronics & Computer, 1996, 13(2): 1-5 |
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| Authors: | Let Peiming Suresh Subramaniam Gary H. Bernstein |
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| Abstract: | This paper reports the design and fabricationtechnology of a new InGaA s /AlAs double barrier tesonant -tunneting - diode based monolithic high - speedlogic intesrated circuit The Schottky/RTD integratedbistable switch fabricated by this technology has beendemonstrated at 3 G Hz. |
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| Keywords: | InGaAs/AlAs double barrier RTD Bistable switch circuit High-speedRTD logic |
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