| 厚膜导体的金属迁移研究 |
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| 引用本文： | 李自学 田耀亭. 厚膜导体的金属迁移研究[J]. 微电子学与计算机, 1996, 13(2): 13-15,19 |
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| 作者姓名： | 李自学 田耀亭 |
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| 作者单位： | 西安徽电子技术研究所 |
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| 摘 要： | 金属迁移能导致混合微电路发生灾难性失效。本文介绍一种简单易行的测试方法－水滴试验法，来测量厚膜电路的实际金属迁移率。用引方法测量时，发现Ｐｄ－Ａｇ导体的迁移率最大，Ｐｔ－Ａｕ导体的金属迁移率最小。
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| 关 键 词： | 金属迁移 厚膜导体 混合集成电路 测试 |
Metal Migration in Thick Film Conductor |
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| Li Zixue Tial,Yaotins and Tian Shuying$. Metal Migration in Thick Film Conductor[J]. Microelectronics & Computer, 1996, 13(2): 13-15,19 |
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| Authors: | Li Zixue Tial Yaotins Tian Shuying$ |
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| Abstract: | Metal Migration has been the cause of many catastrophic microcircuit failures. in this paper we discribed an effective and simple test-water drop test.It's a good practice to test thick film conductor for metal migrations.Tie results was given here: Pd-Ag conductors had the highest propensity of migration,Pt-Au conductors had the lowest one. Also, metal migration in Pd-Ag conductors has been studied with electrochemical theory. Finally some ground rules to suppress of prevrnt migration have been suggested. |
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| Keywords: | Thick film Metal migration Pd- Ag conductor |
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