Functional possibilities of Ag- N 0AlGaAs- n +GaAs- n 0GaInAs-au structures with an isotype base region |
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| Authors: | A V Karimov D M Edgorova F A Giyasova and R A Saidova |
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| Affiliation: | (1) Physical-Technical Institute, Scientific-Production Association “Fizika-Solntse” (“Physics-Sun”), Academy of Sciences of the Republic of Uzbekistan, 2b Mavlyanov Str., Tashkent, 700084, Uzbekistan |
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| Abstract: | We have considered the spectral characteristics of two-base structures with isotype heterojunctions and with Schottky and
Mott barriers to the base regions and explained the features of the impurity and photovoltaic effects in two-base structures
containing deep impurity levels of oxygen and intrinsic defects.
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 81, No. 5, pp. 1005–1009, September–October, 2008. |
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