1.48- mu m high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiers |
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| Authors: | H. Asano S. Takano M. Kawaradani M. Kitamura I. Mito |
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| Affiliation: | NEC Corp., Kawasaki, Japan; |
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| Abstract: | The device parameter optimization for 1.48 mu m InGaAs/InGaAsP multiple quantum well laser diodes (MQW-LDs) was reported. Approximately 800- mu m-long MQW-LDs with five wells were found to give a moderately low driving current for 100 mW light output, as well as high maximum power. 250 mW maximum CW power was achieved for a long-cavity (1800 mu m) MQW LD. The MQW LDs were shown to operate stably at 100 mW output power as well.<> |
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