聚天冬氨酸对铜缓蚀作用的光电化学研究

用光电化学方法研究了绿色水处理药剂聚天冬氨酸对铜的缓蚀作用，铜在硼酸-硼砂缓冲溶液（pH=9.2）中，表面的Cu₂O膜显p-型光响应，添加适量缓蚀剂聚天冬氨酸（PASP）后，PASP吸附在铜电极表面成膜促使Cu₂O膜增厚，体现在电位在负向扫描过程中Cu₂O膜的p-型光电流增大。 p-型光电流越大，缓蚀性能越好。当PASP浓度为3 mg·L^-1时，Cu₂O膜的p-型光电流最大，缓蚀性能最好。 Cl^-的存在会阻止PASP在铜电极表面的吸附，使Cu₂O膜暴露而受侵蚀，导致了PASP的缓蚀性能变差。

Photoelectrochemical study of inhibition mechanism of PASP on copper

The inhibition mechanism of polyaspartic（PASP）on copper electrode in a borax buffer solution was studied by the photocurrent response method. The copper electrode in a borax buffer solution showed p-type photocurrent response which came from Cu₂O layer on its surface. The photocurrent response during cathodic polarization became bigger when inhibitor PASP which could be adsorbed on the Cu electrode and make Cu₂O layer thicker was added. The bigger the photocurrent response，the better the inhibition effect. When adding PASP with a concentration of 3 mg·L^-1，the photocurrent response was the biggest and inhibition of copper corrosion was the best. Cl^- could prevent PASP from being absorbed and make Cu₂O layer unprotected，resulting in worse inhibition.