A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-/spl Omega/ output |
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| Authors: | Bakalski W. Simburger W. Thuringer R. Vasylyev A. Scholtz A.L. |
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| Affiliation: | Infineon Corp. Res., Munich, Germany; |
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| Abstract: | A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.35-/spl mu/m SiGe bipolar technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching. Further, it uses three coils for the integrated LC-output balun and the RF choke. Thus, the power amplifier does not require any external components. At 1.0-V, 1.5-V, and 2.4-V supply voltages, output powers of 17.7 dBm, 21.6 dBm, and 25 dBm are achieved at 5.3 GHz. The respective power-added efficiencies (PAE) are 15%, 22%, and 24%. The small-signal gain is 26 dB. The output 1-dB compression point at 2.4 V is 22 dBm with a PAE of 14%. |
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