| 高隔离度S波段MEMS膜桥开关 |
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| 引用本文： | 朱健,周百令,郁元卫,陆乐,贾世星,张龙. 高隔离度S波段MEMS膜桥开关[J]. 固体电子学研究与进展, 2004, 24(1): 64-67 |
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| 作者姓名： | 朱健 周百令 郁元卫 陆乐 贾世星 张龙 |
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| 作者单位： | 东南大学仪器科学与工程系,南京,210096;南京电子器件研究所,南京,210016;东南大学仪器科学与工程系,南京,210096;南京电子器件研究所,南京,210016 |
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| 基金项目： | 江苏省自然科学基金资助项目 (BK2 0 0 1192 ) |
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| 摘 要： | 常规的 MEMS膜桥开关在 1 0 GHz以上频段才具有低插损、高隔离度 (>2 0 d B)的优点。文中介绍了一种应用于微波低频段—— S波段的高隔离 MEMS膜桥开关 ,给出了开关的设计与优化方法 ,建立了开关的等效电路模型。通过双膜桥结构、选择高介电常数的介质膜、微电感结构膜桥这些措施 ,达到提高开关隔离度的目的。利用 HFSS软件仿真的结果表明 ,该开关在微波低频段 (3～ 6GHz)有着很好的隔离性能。开关样品在片测试的电性能指标 :插损 <0 .3 d B,隔离度 >40 d B,驱动电压 <2 0 V
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| 关 键 词： | 微机电系统 射频开关 高隔离度 |
| 文章编号： | 1000-3819(2004)01-064-04 |
| 修稿时间： | 2003-05-08 |
High-isolation S-band MEMS Membrane Switches |
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| ZHU Jian , ZHOU Bailing YU Yuanwei LU Le JIA Shixing ZHANG Long. High-isolation S-band MEMS Membrane Switches[J]. Research & Progress of Solid State Electronics, 2004, 24(1): 64-67 |
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| Authors: | ZHU Jian ZHOU Bailing YU Yuanwei LU Le JIA Shixing ZHANG Long |
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| Affiliation: | ZHU Jian 1,2 ZHOU Bailing 1 YU Yuanwei 2 LU Le 2 JIA Shixing 2 ZHANG Long 2 |
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| Abstract: | Conventional membrane switches have low-loss and high-isolation(>20dB) performance only at the frequency above 10 GHz. This paper presents the design, optimization and equivalent circuit model for S-band MEMS membrane switches with two-bridge, which is based on surface micromachining fabrication. The major processes consist of fabricating CPW transmission lines, dielectric layer on silicon substrate, and inductive metal bridge. A high-isolation MEMS switch at S-band with high ε dielectric layer and dual inductor-tuned bridge membrane are designed to increase the switch isolation. The result simulated by HFSS shows high-isolation performance at 3～6 GHz. On-wafer measurement results are as follows: the insertion loss(IL) is less than 0.3 dB, the isolation(ISO) is more than 40 dB and the drive voltage is less than 20 V at S-band. |
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| Keywords: | MEMS RF switch high-isolation |
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