A study of diamond synthesis by hot filament chemical vapor deposition on Nc coatings

Deposition of diamond films onto various substrates can result in significant technological advantages in terms of functionality and improved life and performance of components. Diamond is hard, wear resistant, chemically inert, and biocompatible. It is considered to be the ideal material for surfaces of cutting tools and biomedical components. However, it is well known that diamond deposition onto technologically important substrates, such as co-cemented carbides and steels, is problematic due to carbon interaction with the substrate, low nucleation densities, and poor adhesion. Several papers previously published in the relevant literature have reported the application of interlayer materials such as metal nitrides and carbides to provide bonding between diamond and hostile substrates. In this study, the chemical vapor deposition (CVD) of polycrystalline diamond on TiN/SiN _x nc (nc) interlayers deposited at relatively low temperatures has been investigated for the first time. The nc layers were deposited at 70 or 400 °C on Si substrates using a dual ion beam deposition system. The results showed that a preliminary seeding pretreatment with diamond suspension was necessary to achieve large diamond nucleation densities and that diamond nucleation was larger on nc films than on bare sc-Si subjected to the same pretreatment and CVD process parameters. TiN/SiN _x layers synthesized at 70 or 400 °C underwent different nanostructure modifications during diamond CVD. The data also showed that TiN/SiN _x films obtained at 400 °C are preferable in so far as their use as interlayers between hostile substrates and CVD diamond is concerned. This paper was presented at the fourth International Surface Engineering Congress and Exposition held August 1–3, 2005 in St. Paul, MN.