|
|||||
|
|
Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy |
|
| Authors: | O Palumbo R Cantelli F Cordero |
| Affiliation: | a INFM and Università di Roma “La Sapienza”, Dipartimento di Fisica, P. le A. Moro 2, I-00185, Roma, Italy b INFM and Istituto di Acustica “O.M. Corbino”, CNR, Area della Ricerca di Roma-Tor Vergata, I-00133, Roma, Italy |
| Abstract: | We review some results obtained by anelastic spectroscopy on H-related defects in III–V semiconductors. Anelastic measurements on InP lead to the formulation of a model explaining the conversion to the semi-insulating (SI) state. Moreover, in GaAs:Zn an extraordinarily fast relaxation rate has been measured and a possible explanation has been suggested. This results are reviewed and discussed in the light of new experiments on InP:Zn, whose spectrum shows a relaxation process similar to the one in GaAs:Zn. |
| Keywords: | Author Keywords: Gallium arsenide Indium phosphide Hydrogen Point defect complexes |
| 本文献已被 ScienceDirect 等数据库收录！ | |