厚度效应对Pb(Zr0.53Ti0.47)O3薄膜微结构、铁电、介电性能的影响

用改进的溶胶-凝胶法在Pt(111)/Ti/SiO₂/Si(100)衬底上制备了不同厚度的高度(111)取向的Pb(Zr_0.53Ti_0.47)O₃薄膜.运用X射线衍射(XRD)和原子力显微镜(AFM)分析了薄膜的微结构,原子力显微镜表明厚度为0.3μm和0.56μm的PZT薄膜的晶粒尺寸和表面粗糙度分别为0.2～0.3μm、2～3μm和0.92nm、34nm.0.3μm和0.56μm PZT薄膜的剩余极化(Pr)和矫顽场(Ec)分别为32.2μC/²、79.9kV/cm, 27.7μC/cm²、54.4kV/cm;在频率100KHz时,薄膜的介电常数和介电损耗分别为539、0.066,821、0.029.

Thickness effects on the microstructure, ferroelectric and dielectric properties of highly (111) oriented Pb(Zr0.53Ti0.47)O3 thin films

Lead zirconate titanate Pb(Zr_0.53 Ti_0.47)O₃(PZT) ferroelectric thin films with various thickness were grown on Pt(111)/Ti/SiO₂/Si(100) substrates by a simple sol-gel process, without reflux or high temperature distillation to remove water. The thin films were annealed at 550～600℃ in oxygen atmosphere by rapid thermal annealing (RTA), the highly (111)-oriented PZT thin films have been obtained. The microstructure and surface morphologies of the thin films have been studied by X-ray diffraction (XRD) and the atomic force microscopy(AFM). AFM images show that the grain thickness and RMS roughness of the highly(111) oriented PZT thin films with thickness of 0.3 and 0.56μm are 0.2～0.3μm,2～3μm and 0.92nm,34nm, respectively. The remanent polarization (Pr) and coercive electric field (Ec) are 32.2μC/cm² and 79.9kV/cm, 27.7μC/cm² and 54.4 kV/cm; at 100kHz, the dielectric constant and dissipation factor are 539 and 0.066, 821 and 0.029, respectively.