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Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography |
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| Abstract: | Subhalf-micrometer p-channel MOSFET's with ultra-thin gate oxide (3.5 nm) have been fabricated using X-ray lithography and electron cyclotron resonance (ECR) plasma etching. The fabricated MOSFET's with 0.2-µm channel lengths show long-channel behavior and extremely high (200 mS/mm) transconductance. |
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