调控多孔硅光致发光波长的研究

用超声声空化与脉冲电化学腐蚀相结合的物理化学综合法在不同的温度下制备多孔硅样品.所测得的样品的光致发光谱曲线表明,将腐蚀槽置于超声器中用脉冲电化学腐蚀方法制备的多孔硅样品,由于声空化所引发的特殊的物理、化学环境对其光致发光峰的波长有明显的影响.实验还表明,制备过程中的温度控制对样品的光致发光峰波长也有不可忽视的影响.

Adjustment of Photoluminescent Wavelengths for Porous Silicon

Photoluminescence spectra curves detected with porous silicon samples prepared in various temperatures by combining the method of ultrasonic vacating and pulse electrochemical etching show that the special physiochemical environment induced by sonic vacating has a significant effect on the photoluminescent peak wavelengths of porous silicon samples prepared by the pulse electrochemical etching method through setting the etching vessel in a ultrasonic machine.Our experiments show that the temperatures in which the samples are prepared also influence nonnegligibly on the photoluminescent peak wavelengths of the samples.