800 V 4H-SiC RESURF-type lateral JFETs |
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| Authors: | Fujikawa K Shibata K Masuda T Shikata S Hayashi H |
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| Affiliation: | Device Technol. Center, Sumitomo Electr. Ind. Ltd., Osaka, Japan; |
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| Abstract: | This letter proposes to show that a lateral switching device has some unique advantages, including little dependence on substrate defects, low on-resistance, and a simple design of heat radiation. A reduced surface field (RESURF) type SiC-JFET is one of candidate devices for an electric or hybrid automobile application. Small RESURF-type SiC-JFETs with gate width of 200 /spl mu/m and a blocking voltage of 800 V were fabricated. The fabrication and characteristics of the devices are described and discussed. |
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