脉冲电弧离子源镀膜均匀性研究

薄膜厚度的均匀性是影响沉积方法应用的一个重要因素，利用脉冲电弧离子镀技术在硅基片上沉积类金刚石薄膜，并用轮廓仪对薄膜的厚度进行测量，研究了不同参数对薄膜均匀性的影响。结果表明：离子源阴极和基片的距离、主回路工作电压以及沉积频率都不同程度地影响薄均匀性，文章还就不同类型离子源对薄膜均匀性的影响进行了探讨。

The thickness uniformity of the films deposited by pulsed-arc ion source

The thickness uniformity of the films is one of the important factors affecting the application of deposition methods. Diamond like carbon(DLC) films have been grown on silicon substrates by pulsed arc deposition. The profilemeter is employed to measure the thickness of films.The emission characteristics and the thickness uniformity of the films deposited by vacuum pulsed arc ion source are studied.The results of the study show that the distance between pulse-arc ion source and film,the voltage of the main circuit and the pulse arc frequency have effects on the thickness uniformity films. the optimum operating parameters are found out according to analytic results. By comparing the difference of two ion sources,one conclusion can be drawn that the uniformity of thickness is affected sharply by the structure of the ion source.