| 沟道SI－GaAs衬底上正装GaAlAs／GaAs BH激光器的制作 |
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| 引用本文： | 殷景志,胡礼中,张皓月. 沟道SI－GaAs衬底上正装GaAlAs／GaAs BH激光器的制作[J]. 半导体光电, 1994, 0(1) |
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| 作者姓名： | 殷景志 胡礼中 张皓月 |
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| 作者单位： | 吉林工业大学，吉林大学 |
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| 摘 要： | 介绍了宽沟道ＳＩ－ＧａＡｓ衬底上的ＢＨ激光器的制作，全部结构由两次外延形成，阈值电流为５５ｍＡ。在Ｉ＝２Ｉｔｈ时，Ｐ－Ｉ曲线仍保持良好的线性关系。
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| 关 键 词： | GaAlAs／GaAaBH激光器宽沟道，正装衬底，二次外延 |
Fabrication of Up-mounted GaAlAs/GaAs BH Lasers on Channelled SI-GaAs Substrates |
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| Ying Jingzhi. Fabrication of Up-mounted GaAlAs/GaAs BH Lasers on Channelled SI-GaAs Substrates[J]. Semiconductor Optoelectronics, 1994, 0(1) |
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| Authors: | Ying Jingzhi |
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| Affiliation: | Ying Jingzhi(Jilin Industrial University.Changchun 130012) Hu Lizhong Zhang Haoyue(Jilin University.Changchun 130023) |
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| Abstract: | The fabrication of a BH laser on wide channel SI-GaAs substrate is introduced which is grown with two steps of epitaxy.The threshold of the laser is so mA with excellent linearity of P-I curve at I=2Ith. |
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| Keywords: | GaAlAs/GaAs BH Laser Wide Channel Up-mounted Substrate Secondary Epitaxy |
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