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GaAs/GaAlAs半导体淬灭型双稳现象的实验研究
引用本文:王守武,刘文旭,杨朴,吴荣汉. GaAs/GaAlAs半导体淬灭型双稳现象的实验研究[J]. 半导体学报, 1990, 11(9): 724-726
作者姓名:王守武  刘文旭  杨朴  吴荣汉
作者单位:北京中国科学院半导体研究所(王守武,刘文旭,杨朴),北京中国科学院半导体研究所(吴荣汉)
摘    要:在研究GaAs/GaAlAs半导体激光器淬灭效应过程中,我们发现其中一种结构的淬灭型半导体激光器的输出表现为一对共轭的双稳特性,我们认为这种双稳现象是由共腔双波导模式淬灭效应引起的。

关 键 词:半导体激光器 淬灭效应 双稳现象

Experimental Investigation on Optical Bistable Phenomena Caused by Laser Quenching Effect in GaAs/GaAlAs Semiconductor Lasers
Wang Shouwu/Institute of Semiconductors,Academia SinicaLiu Wenxu/Institute of Semiconductors,Academia SinicaYang Pu/Institute of Semiconductors,Academia SinicaWu Ronghan/Institute of Semiconductors,Academia Sinica. Experimental Investigation on Optical Bistable Phenomena Caused by Laser Quenching Effect in GaAs/GaAlAs Semiconductor Lasers[J]. Chinese Journal of Semiconductors, 1990, 11(9): 724-726
Authors:Wang Shouwu/Institute of Semiconductors  Academia SinicaLiu Wenxu/Institute of Semiconductors  Academia SinicaYang Pu/Institute of Semiconductors  Academia SinicaWu Ronghan/Institute of Semiconductors  Academia Sinica
Abstract:The output characteristics of one kind of the semiconductor lasers used to study quenchingeffect show a pair of conjugate bistable Curves. This phenomenon may be caused by alaser quenching effect between the two modes of the co-cavity two waveguides.
Keywords:Quenching effect  Bistable phenomena  Laser quenching effect  co-cavity two waveguides
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